High throughput ion implanter for AMLCD

When used in active matrix liquid crystal display manufacturing, an ion implanter must be capable of throughput over 60 panels/hour, accurate dose control and robust panel cooling. An implanter, designed to meet these requirements by using a ribbon beam ion source coupled with panel scanning, is des...

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Bibliographic Details
Published in:Semiconductor international 1997-03, Vol.20 (3), p.111-116
Main Authors: BLAKE, J, BRAILOVE, A, CHEN, K, KING, M, ROSE, P. H, STEVENS, J, SATO, M
Format: Magazinearticle
Language:English
Subjects:
Applied sciences
Cooling
Cost control
Dosimetry
Electronics
Electronics industry
Exact sciences and technology
Glass substrates
Hydrogen
Industrial equipment
Ion beams
Ion implantation
Liquid crystal displays
Manufacturers
Manufacturing
Methods
Microelectronic fabrication (materials and surfaces technology)
Plasma
Robots
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon wafers
Temperature
Transplants & implants
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Summary:When used in active matrix liquid crystal display manufacturing, an ion implanter must be capable of throughput over 60 panels/hour, accurate dose control and robust panel cooling. An implanter, designed to meet these requirements by using a ribbon beam ion source coupled with panel scanning, is described. Process data for p- and n-type source and drain doping, and particularly for low dose channel implants performed over a 60-day period, are also presented.
ISSN:0163-3767