Copper CMP challenges

Planarizing copper is no less challenging than depositing copper for damascene interconnect structures. Copper chemical-mechanical planarization for damascene structures involves developing a polish process that minimizes the pattern density and feature size effects associated with typical CMP proce...

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Bibliographic Details
Published in:Semiconductor international 1998-06, Vol.21 (6), p.96
Main Author: Bajaj, Rajeev
Format: Magazinearticle
Language:English
Subjects:
Copper
Interconnect
Semiconductors
Topography
Online Access:Get full text
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Summary:Planarizing copper is no less challenging than depositing copper for damascene interconnect structures. Copper chemical-mechanical planarization for damascene structures involves developing a polish process that minimizes the pattern density and feature size effects associated with typical CMP processes.
ISSN:0163-3767