Self-Aligned Barrier Improves Interconnect Reliability

A new PECVD self-aligned barrier using a germanium dopant offers a simple, cost-effective means of improving electromigration resistance of copper interconnects. Germanium has long been recognized as one of the chemicals of choice for these applications. Recently, a novel technique for Ge-PSAB was d...

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Bibliographic Details
Published in:Semiconductor International 2008-05, Vol.31 (5), p.34
Main Authors: Hui-Jung, Wu, O'loughlin, Jennifer, Shaviv, Roey, Sriram, Mandyam, Chattopadhyay, Kaushik, Yongsik Yu,Tom Mountsier,Bart van Schravendijk, Varadarajan, Sesha, Dixit, Girish, Havemann, Robert
Format: Magazinearticle
Language:English
Subjects:
Chemical vapor deposition
Connectivity
Copper
Interfaces
Product development
Semiconductors
Temperature
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Summary:A new PECVD self-aligned barrier using a germanium dopant offers a simple, cost-effective means of improving electromigration resistance of copper interconnects. Germanium has long been recognized as one of the chemicals of choice for these applications. Recently, a novel technique for Ge-PSAB was developed. Process integration testing of the Ge-PSAB process using 65 nm node features and a dual damascene scheme with Coral bulk low-k dielectric. Two metal layer damascene structures were used for reliability investigation. Comb capacitor line-to-line dielectric breakdown data collected from test structures with 80 nm spaces showed that Ge-PSAB and the control processes provide a statistically equivalent breakdown performance.
ISSN:0163-3767