Overcome the challenges of 45-nm design

Defect issues: New fabrication techniques often result in defect issues. As an example, consider how UMC's fabrication of working 45-nm SRAM identified potential defect issues associated with immersion lithography. Such issues include resist/topcoat selection and recipe optimization for each la...

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Bibliographic Details
Published in:Electronic Design 2007-05, Vol.55 (10), p.28
Main Author: Liang, Chia Wen
Format: Magazinearticle
Language:English
Subjects:
Circuit design
Design and construction
Design engineering
Electronics industry
Integrated circuits
Manufacturing
Methods
Nanotechnology
Semiconductor chips
Technology application
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Description
Summary:Defect issues: New fabrication techniques often result in defect issues. As an example, consider how UMC's fabrication of working 45-nm SRAM identified potential defect issues associated with immersion lithography. Such issues include resist/topcoat selection and recipe optimization for each layer, compatible etch recipes to achieve the final resolution, and alignment limitations imposed by current scanners before immersion lithography's full maturity.
ISSN:0013-4872
1944-9550