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Optimization of an ultra low-phase noise sapphire-SiGe HBT oscillator using nonlinear CAD

In this paper, the electrical and noise performances of a 0.8 /spl mu/m silicon germanium (SiGe) transistor optimized for the design of low phase-noise circuits are described. A nonlinear model developed for the transistor and its use for the design of a low-phase noise C band sapphire resonator osc...

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Bibliographic Details
Published in:IEEE transactions on ultrasonics, ferroelectrics, and frequency control ferroelectrics, and frequency control, 2004-01, Vol.51 (1), p.33-41, Article 33
Main Authors: Cibiel, G., Regis, M., Llopis, O., Rennane, A., Bary, L., Plana, R., Kersale, Y., Giordano, V.
Format: Article
Language:English
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Summary:In this paper, the electrical and noise performances of a 0.8 /spl mu/m silicon germanium (SiGe) transistor optimized for the design of low phase-noise circuits are described. A nonlinear model developed for the transistor and its use for the design of a low-phase noise C band sapphire resonator oscillator are also reported. The best measured phase noise (at ambient temperature) is -138 dBc/Hz at 1 kHz offset from a 4.85 GHz carrier frequency, with a loaded Q/sub L/ factor of 75,000.
ISSN:0885-3010
1525-8955
DOI:10.1109/TUFFC.2004.1268465