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Optimization of an ultra low-phase noise sapphire-SiGe HBT oscillator using nonlinear CAD
In this paper, the electrical and noise performances of a 0.8 /spl mu/m silicon germanium (SiGe) transistor optimized for the design of low phase-noise circuits are described. A nonlinear model developed for the transistor and its use for the design of a low-phase noise C band sapphire resonator osc...
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Published in: | IEEE transactions on ultrasonics, ferroelectrics, and frequency control ferroelectrics, and frequency control, 2004-01, Vol.51 (1), p.33-41, Article 33 |
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Main Authors: | , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | In this paper, the electrical and noise performances of a 0.8 /spl mu/m silicon germanium (SiGe) transistor optimized for the design of low phase-noise circuits are described. A nonlinear model developed for the transistor and its use for the design of a low-phase noise C band sapphire resonator oscillator are also reported. The best measured phase noise (at ambient temperature) is -138 dBc/Hz at 1 kHz offset from a 4.85 GHz carrier frequency, with a loaded Q/sub L/ factor of 75,000. |
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ISSN: | 0885-3010 1525-8955 |
DOI: | 10.1109/TUFFC.2004.1268465 |