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Electrical and optoelectronic characterization of a ZnO nanowire contacted by focused-ion-beam-deposited Pt
We report on the transport properties of a single ZnO nanowire (NW) measured as a function of the length/square of the radius ratio via the transmission line method (TLM). The specific contact resistance of FIB-Pt contacts to the ZnO NWs is determined to be as low as 1.1 x 10(-5) Omega cm(2). The re...
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Published in: | Nanotechnology 2009-04, Vol.20 (13), p.135701-135701 |
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Main Authors: | , , , |
Format: | Article |
Language: | English |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | We report on the transport properties of a single ZnO nanowire (NW) measured as a function of the length/square of the radius ratio via the transmission line method (TLM). The specific contact resistance of FIB-Pt contacts to the ZnO NWs is determined to be as low as 1.1 x 10(-5) Omega cm(2). The resistivity of the ZnO NWs is measured to be 2.2 x 10(-2) Omega cm. ZnO NW-based UV photodetectors contacted by FIB-Pt with a photoconductive gain as high as approximately 10(8) have been fabricated and characterized. |
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ISSN: | 0957-4484 1361-6528 |
DOI: | 10.1088/0957-4484/20/13/135701 |