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Electrical and optoelectronic characterization of a ZnO nanowire contacted by focused-ion-beam-deposited Pt
We report on the transport properties of a single ZnO nanowire (NW) measured as a function of the length/square of the radius ratio via the transmission line method (TLM). The specific contact resistance of FIB-Pt contacts to the ZnO NWs is determined to be as low as 1.1 x 10(-5) Omega cm(2). The re...
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| Published in: | Nanotechnology 2009-04, Vol.20 (13), p.135701-135701 |
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| Main Authors: | , , , |
| Format: | Article |
| Language: | English |
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| cited_by | cdi_FETCH-LOGICAL-c500t-3db8d69ff57fd633facd6a556809d6db18d2fd68459d12826e3578b9879988433 |
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| cites | cdi_FETCH-LOGICAL-c500t-3db8d69ff57fd633facd6a556809d6db18d2fd68459d12826e3578b9879988433 |
| container_end_page | 135701 |
| container_issue | 13 |
| container_start_page | 135701 |
| container_title | Nanotechnology |
| container_volume | 20 |
| creator | He, J H Chang, P H Chen, C Y Tsai, K T |
| description | We report on the transport properties of a single ZnO nanowire (NW) measured as a function of the length/square of the radius ratio via the transmission line method (TLM). The specific contact resistance of FIB-Pt contacts to the ZnO NWs is determined to be as low as 1.1 x 10(-5) Omega cm(2). The resistivity of the ZnO NWs is measured to be 2.2 x 10(-2) Omega cm. ZnO NW-based UV photodetectors contacted by FIB-Pt with a photoconductive gain as high as approximately 10(8) have been fabricated and characterized. |
| doi_str_mv | 10.1088/0957-4484/20/13/135701 |
| format | article |
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| source | Institute of Physics:Jisc Collections:IOP Publishing Read and Publish 2024-2025 (Reading List) |
| title | Electrical and optoelectronic characterization of a ZnO nanowire contacted by focused-ion-beam-deposited Pt |
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