Low temperature Ga surface diffusion from focused ion beam milled grooves

Ga diffusion from focused ion beam (FIB) milled grooves has been studied using x-ray photoemission electron microscopy (XPEEM) and mirror electron microscopy (MEM). We analyze the surface chemistry of the FIB structures measuring the Ga presence in the top layers of the milled grooves and morphologi...

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Bibliographic Details
Published in:Nanotechnology 2009-08, Vol.20 (32), p.325304-325304
Main Authors: Mikkelsen, A, Hilner, E, Andersen, J N, Ghatnekar-Nilsson, S, Montelius, L, Zakharov, A A
Format: Article
Language:English
Subjects:
Engineering and Technology
Nano Technology
Nanoteknik
Teknik
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Summary:Ga diffusion from focused ion beam (FIB) milled grooves has been studied using x-ray photoemission electron microscopy (XPEEM) and mirror electron microscopy (MEM). We analyze the surface chemistry of the FIB structures measuring the Ga presence in the top layers of the milled grooves and morphological defects inside the grooves. The Ga is initially strictly confined to the grooves. However, annealing at temperatures as low as 150 degrees C leads to rapid and significant Ga surface diffusion from the FIB structures. The out-diffused Ga forms a thin layer extending up to several microns laterally in a non-regular pattern. The diffusion is significantly enhanced at small crystallites at the edges of the grooves. We explain the general behavior with an atomic scale model in which interstitial Ga in the milled areas diffuses out and substitutes silanol groups on the surface.
ISSN:0957-4484
1361-6528
DOI:10.1088/0957-4484/20/32/325304