Terahertz emission from electric field singularities in biased semiconductors

Summary form only given. Fast electrical transients and terahertz (THz) radiation are generated when biased coplanar striplines are excited within the gap by short laser pulses. This generation process is particularly efficient when the excitation is carried out close to the anode and has been obser...

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Bibliographic Details
Published in:Optics letters 1996-12, Vol.21 (23), p.83-84
Main Authors: Brener, I., Dykaar, D., Frommer, A., Pfeiffer, L., West, K.
Format: Article
Language:English
Subjects:
Charge carrier density
Conductivity
Density measurement
Electrons
Focusing
Gallium arsenide
Molecular beam epitaxial growth
Position measurement
Semiconductor device doping
Spatial resolution
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Summary:Summary form only given. Fast electrical transients and terahertz (THz) radiation are generated when biased coplanar striplines are excited within the gap by short laser pulses. This generation process is particularly efficient when the excitation is carried out close to the anode and has been observed in a number of material systems. In this work we go one step further and use electric field singularities in metal-semiconductor microstructures to generate efficient THz radiation and electrical transients.
ISSN:0146-9592
1539-4794
DOI:10.1364/OL.21.001924