One-dimensional germanium nanostructures—formation and their electron field emission properties

Ge nanostructures were synthesized by reduction of GeO(2) in H(2) atmosphere at various temperatures. Entangled and straight Ge nanowires with oxide shells were grown at high temperatures. Ge nanowires with various numbers of nodules were obtained at low temperatures. Ge nanowires without nodules ex...

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Bibliographic Details
Published in:Nanotechnology 2010-11, Vol.21 (45), p.455601-455601
Main Authors: Wu, Hung-Chi, Hou, Te-Chien, Chueh, Yu-Lun, Chen, Lih-Juann, Chiu, Hsin-Tien, Lee, Chi-Young
Format: Article
Language:English
Subjects:
Field emission
Germanium
Germanium oxides
Nanocomposites
Nanomaterials
Nanostructure
Nanowires
Nodules
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Summary:Ge nanostructures were synthesized by reduction of GeO(2) in H(2) atmosphere at various temperatures. Entangled and straight Ge nanowires with oxide shells were grown at high temperatures. Ge nanowires with various numbers of nodules were obtained at low temperatures. Ge nanowires without nodules exhibited remarkable field emission properties with a turn-on field of 4.6 V µm(-1) and field enhancement factor of 1242.
ISSN:0957-4484
1361-6528
DOI:10.1088/0957-4484/21/45/455601