Self-assembly of conductive Cu nanowires on Si(111)'5 × 5 '-Cu surface

Upon room-temperature deposition onto a Cu/Si(111)'5 × 5' surface in ultra-high vacuum, Cu atoms migrate over extended distances to become trapped at the step edges, where they form Cu nanowires (NWs). The formed NWs are 20-80 nm wide, 1-3 nm high and characterized by a resistivity of ∼8 µ...

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Bibliographic Details
Published in:Nanotechnology 2008-06, Vol.19 (24), p.245608-245608
Main Authors: Tsukanov, Dmitry A, Ryzhkova, Maria V, Gruznev, Dimitry V, Utas, Oleg A, Kotlyar, Vasily G, Zotov, Andrey V, Saranin, Alexander A
Format: Article
Language:English
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Summary:Upon room-temperature deposition onto a Cu/Si(111)'5 × 5' surface in ultra-high vacuum, Cu atoms migrate over extended distances to become trapped at the step edges, where they form Cu nanowires (NWs). The formed NWs are 20-80 nm wide, 1-3 nm high and characterized by a resistivity of ∼8 µΩ cm. The surface conductance of the NW array is anisotropic, with the conductivity along the NWs being about three times greater than that in the perpendicular direction. Using a similar growth technique, not only the straight NWs but also other types of NW-based structures (e.g. nanorings) can be fabricated.
ISSN:0957-4484
1361-6528
DOI:10.1088/0957-4484/19/24/245608