Photovoltaic device on a single ZnO nanowire p-n homojunction

A photovoltaic device was successfully grown solely based on the single ZnO p-n homojunction nanowire. The ZnO nanowire p-n diode consists of an as-grown n-type segment and an in situ arsenic-doped p-type segment. This p-n homojunction acts as a good photovoltaic cell, producing a photocurrent almos...

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Bibliographic Details
Published in:Nanotechnology 2012-03, Vol.23 (11), p.115401-1-6
Main Authors: Cho, Hak Dong, Zakirov, Anvar S, Yuldashev, Shavkat U, Ahn, Chi Won, Yeo, Yung Kee, Kang, Tae Won
Format: Article
Language:English
Subjects:
Devices
Homojunctions
Nanocomposites
Nanomaterials
Nanostructure
Nanowires
Photovoltaic cells
Solar cells
Zinc oxide
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Summary:A photovoltaic device was successfully grown solely based on the single ZnO p-n homojunction nanowire. The ZnO nanowire p-n diode consists of an as-grown n-type segment and an in situ arsenic-doped p-type segment. This p-n homojunction acts as a good photovoltaic cell, producing a photocurrent almost 45 times larger than the dark current under reverse-biased conditions. Our results demonstrate that the present ZnO p-n homojunction nanowire can be used as a self-powered ultraviolet photodetector as well as a photovoltaic cell, which can also be used as an ultralow electrical power source for nanoscale electronic, optoelectronic and medical devices.
ISSN:0957-4484
1361-6528
DOI:10.1088/0957-4484/23/11/115401