Site-specific stamping of graphene micro-patterns over large areas using flexible stamps

• Published in: Nanotechnology 2012-06, Vol.23 (23), p.235603-235603
• Main Authors: Chen, Chun-Hu, Reddy, Kongara M, Padture, Nitin P
• Format: Article
• Language: English
• Subjects: Arrays; Crystallization - methods; Elastic Modulus; Graphite - chemistry; Macromolecular Substances - chemistry; Materials Testing; Membranes, Artificial; Molecular Conformation; Molecular Imprinting - methods; Nanostructures - chemistry; Nanostructures - ultrastructure; Particle Size; Surface Properties
• ISSN: 0957-4484; 1361-6528
• DOI: 10.1088/0957-4484/23/23/235603

Site-specific stamping has the potential of becoming a low-cost, high-throughput method for depositing specific-shaped graphene micro-patterns over large areas on a wide variety of substrates. The use of an approach involving flexible stamps presented here represents an important advance towards reaching that potential. This approach entails lithographic creation (dry etching) of high-quality micro-pillar arrays of highly oriented pyrolytic graphite (HOPG) over large areas. This is followed by embedding the micro-pillar arrays in polydimethylsiloxane (PDMS), and detaching them from the HOPG base. This results in flexible stamps containing embedded HOPG micro-pillar arrays with freshly cleaved stamping surfaces. The flexible HOPG/PDMS stamps are then brought into contact with substrate surfaces to site-specifically stamp graphene or few-layer graphene (FLG) arrays over large areas. The freshly cleaved nature of the micro-pillar surfaces in the flexible stamps, the low elastic modulus of the flexible stamps and the elimination of sidewall deposits on the micro-pillars allow for more uniform stamping, relative to the use of stiff HOPG stamps from earlier studies. This approach has the potential to expand the substrate choice for graphene or FLG stamping to include curved and/or flexible substrates that could have an impact on the burgeoning field of flexible/stretchable electronics.