ZnO nanowire co-growth on SiO2 and C by carbothermal reduction and vapour advection

Vertically aligned ZnO nanowires (NWs) were grown on Au-nanocluster-seeded amorphous SiO2 films by the advective transport and deposition of Zn vapours obtained from the carbothermal reaction of graphite and ZnO powders. Both the NW volume and visible-to-UV photoluminescence ratio were found to be s...

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Bibliographic Details
Published in:Nanotechnology 2012-07, Vol.23 (27), p.275602-275602
Main Authors: Vega, N C, Wallar, R, Caram, J, Grinblat, G, Tirado, M, LaPierre, R R, Comedi, D
Format: Article
Language:English
Subjects:
Carbon - chemistry
Crystallization - methods
Gases - chemistry
Hot Temperature
Macromolecular Substances - chemistry
Materials Testing
Molecular Conformation
Nanotubes - chemistry
Nanotubes - ultrastructure
Oxidation-Reduction
Particle Size
Silicon Dioxide - chemistry
Surface Properties
Zinc Oxide - chemistry
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Summary:Vertically aligned ZnO nanowires (NWs) were grown on Au-nanocluster-seeded amorphous SiO2 films by the advective transport and deposition of Zn vapours obtained from the carbothermal reaction of graphite and ZnO powders. Both the NW volume and visible-to-UV photoluminescence ratio were found to be strong functions of, and hence could be tailored by, the (ZnO+C) source-SiO2 substrate distance. We observe C flakes on the ZnO NWs/SiO2 substrates which exhibit short NWs that developed on both sides. The SiO2 and C substrates/NW interfaces were studied in detail to determine growth mechanisms. NWs on Au-seeded SiO2 were promoted by a rough ZnO seed layer whose formation was catalysed by the Au clusters. In contrast, NWs grew without any seed on C. A correlation comprising three orders of magnitude between the visible-to-UV photoluminescence intensity ratio and the NW volume is found, which results from a characteristic Zn partial pressure profile that fixes both O deficiency defect concentration and growth rate.
ISSN:0957-4484
1361-6528
DOI:10.1088/0957-4484/23/27/275602