Excitonic properties of wurtzite InP nanowires grown on silicon substrate

In order to investigate the optical properties of wurtzite (Wz) InP nanowires grown on Si(001) by solid source molecular beam epitaxy with the vapour-liquid-solid method, the growth temperature and V III pressure ratio have been optimized to remove any zinc-blende insertion. These pure Wz InP nanowi...

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Bibliographic Details
Published in:Nanotechnology 2013-01, Vol.24 (3), p.035704-1-10
Main Authors: Hadj Alouane, M H, Chauvin, N, Khmissi, H, Naji, K, Ilahi, B, Maaref, H, Patriarche, G, Gendry, M, Bru-Chevallier, C
Format: Article
Language:English
Subjects:
Condensed Matter
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Cross-disciplinary physics: materials science
rheology
Electron states
Exact sciences and technology
Excitation
Excitons and related phenomena
Indium phosphides
Insertion
Materials Science
Methods of nanofabrication
Nanoscale materials and structures: fabrication and characterization
Nanotechnology
Nanowires
Optical properties
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures
Physics
Quantum wires
Silicon substrates
Wurtzite
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Summary:In order to investigate the optical properties of wurtzite (Wz) InP nanowires grown on Si(001) by solid source molecular beam epitaxy with the vapour-liquid-solid method, the growth temperature and V III pressure ratio have been optimized to remove any zinc-blende insertion. These pure Wz InP nanowires have been investigated by photoluminescence (PL), time-resolved PL and PL excitation. Direct observation of the second and third valence band in Wz InP nanowires using PL spectroscopy at high excitation power have been reported and, from these measurements, a crystal field splitting of 74 meV and a spin-orbit interaction energy of 145 meV were extracted. Based on the study of temperature-dependent optical properties, we have performed an investigation of the thermal escape processes of carriers and the electron-phonon coupling strength.
ISSN:0957-4484
1361-6528
DOI:10.1088/0957-4484/24/3/035704