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Anti‐Solvent Derived Non‐Stacked Reduced Graphene Oxide for High Performance Supercapacitors
An anti‐solvent for graphene oxide (GO), hexane, is introduced to increase the surface area and the pore volume of the non‐stacked GO/reduced GO 3D structure and allows the formation of a highly crumpled non‐stacked GO powder, which clearly shows ideal supercapacitor behavior.
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Published in: | Advanced materials (Weinheim) 2013-08, Vol.25 (32), p.4437-4444 |
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Main Authors: | , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Online Access: | Get full text |
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Summary: | An anti‐solvent for graphene oxide (GO), hexane, is introduced to increase the surface area and the pore volume of the non‐stacked GO/reduced GO 3D structure and allows the formation of a highly crumpled non‐stacked GO powder, which clearly shows ideal supercapacitor behavior. |
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ISSN: | 0935-9648 1521-4095 |
DOI: | 10.1002/adma.201301230 |