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Anti‐Solvent Derived Non‐Stacked Reduced Graphene Oxide for High Performance Supercapacitors

An anti‐solvent for graphene oxide (GO), hexane, is introduced to increase the surface area and the pore volume of the non‐stacked GO/reduced GO 3D structure and allows the formation of a highly crumpled non‐stacked GO powder, which clearly shows ideal supercapacitor behavior.

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Bibliographic Details
Published in:Advanced materials (Weinheim) 2013-08, Vol.25 (32), p.4437-4444
Main Authors: Yoon, Yeoheung, Lee, Keunsik, Baik, Chul, Yoo, Heejoun, Min, Misook, Park, Younghun, Lee, Sae Mi, Lee, Hyoyoung
Format: Article
Language:English
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Description
Summary:An anti‐solvent for graphene oxide (GO), hexane, is introduced to increase the surface area and the pore volume of the non‐stacked GO/reduced GO 3D structure and allows the formation of a highly crumpled non‐stacked GO powder, which clearly shows ideal supercapacitor behavior.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201301230