Transfer of self-aligned spacer patterns for single-digit nanofabrication

We report the transfer of sub-10 nm half-pitch grating patterns created through a combination of block copolymer directed self-assembly and sidewall spacer-based self-aligned double patterning into Si substrates. Low substrate bias reactive ion etching of TiOx conformally deposited onto carbon mandr...

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Bibliographic Details
Published in:Nanotechnology 2015-02, Vol.26 (8), p.085304-085304
Main Authors: Doerk, Gregory S, Gao, He, Wan, Lei, Lille, Jeff, Patel, K C, Chapuis, Yves-Andre, Ruiz, Ricardo, Albrecht, Thomas R
Format: Article
Language:English
Subjects:
atomic layer deposition
Carbon
Density
Deposition
directed self-assembly
double patterning
Etching
Mandrels
nanoimprint lithography
Nanostructure
patterned media
Self assembly
Spacers
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Summary:We report the transfer of sub-10 nm half-pitch grating patterns created through a combination of block copolymer directed self-assembly and sidewall spacer-based self-aligned double patterning into Si substrates. Low substrate bias reactive ion etching of TiOx conformally deposited onto carbon mandrels using atomic layer deposition renders distinct, pitch-halved spacers with minimal etch byproduct redeposition. Independent spacer and mandrel width control and the use of an underlying CrNx hard mask deposited by reactive sputtering facilitates etching of Si lines with low roughness and fine placement control. The insights into pattern transfer presented here are directly applicable to the fabrication of rectangular bit pattern nanoimprint templates at densities above 1.5 Td in−2.
ISSN:0957-4484
1361-6528
DOI:10.1088/0957-4484/26/8/085304