Bias assisted scanning probe microscopy direct write lithography enables local oxygen enrichment of lanthanum cuprates thin films

Scanning probe bias techniques have been used as a method to locally dope thin epitaxial films of La2CuO4 (LCO) fabricated by pulsed laser deposition. The local electrochemical oxidation of LCO very efficiently introduces interstitial oxygen defects in the thin film. Details on the influence of the...

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Bibliographic Details
Published in:Nanotechnology 2015-08, Vol.26 (32), p.325302-325302
Main Authors: Lavini, Francesco, Yang, Nan, Vasudevan, Rama K, Strelcov, E, Jesse, S, Okatan, M B, Kravchenko, I, Di Castro, Daniele, Kalinin, Sergei V, Balestrino, Giuseppe, Aruta, Carmela, Foglietti, Vittorio
Format: Article
Language:English
Subjects:
AFM lithography
Bias
COPPER OXIDE
CRYSTAL GROWTH
Dopes
Electric potential
EPITAXY
INTERSTITIALS
Lithography
MATERIALS SCIENCE
MICROSCOPY
Morphology
Nanotechnology
OXYGEN
surface electrochemical processes
THIN FILMS
tip-induced local oxidation
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Summary:Scanning probe bias techniques have been used as a method to locally dope thin epitaxial films of La2CuO4 (LCO) fabricated by pulsed laser deposition. The local electrochemical oxidation of LCO very efficiently introduces interstitial oxygen defects in the thin film. Details on the influence of the tip voltage bias and environmental conditions on the surface morphology have been investigated. The results show that a local uptake of oxygen occurs in the oxidized films.
ISSN:0957-4484
1361-6528
DOI:10.1088/0957-4484/26/32/325302