Electric field control of magnetic properties and electron transport in BaTiO3-based multiferroic heterostructures

In this paper, we report on a purely electric mechanism for achieving the electric control of the interfacial spin polarization and magnetoresistance in multiferroic tunneling junctions. We investigate micrometric devices based on the Co/Fe/BaTiO3/La0.7Sr0.3MnO3 heterostructure, where Co/Fe and La0....

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Bibliographic Details
Published in:Journal of physics. Condensed matter 2015-12, Vol.27 (50), p.504004-504004
Main Authors: Asa, M, Baldrati, L, Rinaldi, C, Bertoli, S, Radaelli, G, Cantoni, M, Bertacco, R
Format: Article
Language:English
Subjects:
antiferromagnetic
BaTiO
interface
magnetoelectric coupling
magnetotransport
multiferroic heterostructure
tunneling
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Summary:In this paper, we report on a purely electric mechanism for achieving the electric control of the interfacial spin polarization and magnetoresistance in multiferroic tunneling junctions. We investigate micrometric devices based on the Co/Fe/BaTiO3/La0.7Sr0.3MnO3 heterostructure, where Co/Fe and La0.7Sr0.3MnO3 are the magnetic electrodes and BaTiO3 acts both as a ferroelectric element and tunneling barrier. We show that, at 20 K, devices with a 2 nm thick BaTiO3 barrier present both tunneling electroresistance (TER = 12   ±   0.1%) and tunneling magnetoresistance (TMR). The latter depends on the direction of the BaTiO3 polarization, displaying a sizable change of the TMR from  −0.32   ±   0.05% for the polarization pointing towards Fe, to  −0.12   ±   0.05% for the opposite direction. This is consistent with the on-off switching of the Fe magnetization at the Fe/BaTiO3 interface, driven by the BaTiO3 polarization, we have previously demonstrated in x-ray magnetic circular dichroism experiments.
ISSN:0953-8984
1361-648X
DOI:10.1088/0953-8984/27/50/504004