Depth resolved lattice-charge coupling in epitaxial BiFeO 3 thin film

For epitaxial films, a critical thickness (t ) can create a phenomenological interface between a strained bottom layer and a relaxed top layer. Here, we present an experimental report of how the t in BiFeO thin films acts as a boundary to determine the crystalline phase, ferroelectricity, and piezoe...

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Bibliographic Details
Published in:Scientific reports 2016-12, Vol.6, p.38724
Main Authors: Lee, Hyeon Jun, Lee, Sung Su, Kwak, Jeong Hun, Kim, Young-Min, Jeong, Hu Young, Borisevich, Albina Y, Lee, Su Yong, Noh, Do Young, Kwon, Owoong, Kim, Yunseok, Jo, Ji Young
Format: Article
Language:English
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Summary:For epitaxial films, a critical thickness (t ) can create a phenomenological interface between a strained bottom layer and a relaxed top layer. Here, we present an experimental report of how the t in BiFeO thin films acts as a boundary to determine the crystalline phase, ferroelectricity, and piezoelectricity in 60 nm thick BiFeO /SrRuO /SrTiO substrate. We found larger Fe cation displacement of the relaxed layer than that of strained layer. In the time-resolved X-ray microdiffraction analyses, the piezoelectric response of the BiFeO film was resolved into a strained layer with an extremely low piezoelectric coefficient of 2.4 pm/V and a relaxed layer with a piezoelectric coefficient of 32 pm/V. The difference in the Fe displacements between the strained and relaxed layers is in good agreement with the differences in the piezoelectric coefficient due to the electromechanical coupling.
ISSN:2045-2322
DOI:10.1038/srep38724