On-Demand Fabrication of Si/SiO 2 Nanowire Arrays by Nanosphere Lithography and Subsequent Thermal Oxidation

We demonstrate the fabrication of the large-area arrays of vertically aligned Si/SiO nanowires with full tunability of the geometry of the single nanowires by the metal-assisted chemical etching technique and the following thermal oxidation process. To fabricate the geometry controllable Si/SiO nano...

Full description

Saved in:
Bibliographic Details
Published in:Nanoscale research letters 2017-12, Vol.12 (1), p.105
Main Authors: Cao, Huaxiang, Li, Xinhua, Zhou, Bukang, Chen, Tao, Shi, Tongfei, Zheng, Jianqiang, Liu, Guangqiang, Wang, Yuqi
Format: Article
Language:English
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We demonstrate the fabrication of the large-area arrays of vertically aligned Si/SiO nanowires with full tunability of the geometry of the single nanowires by the metal-assisted chemical etching technique and the following thermal oxidation process. To fabricate the geometry controllable Si/SiO nanowire (NW) arrays, two critical issues relating with the size control of polystyrene reduction and oxide thickness evolution are investigated. Through analyzing the morphology evolutions of polystyrene particles, we give a quantitative description on the diameter variations of polystyrene particles with the etching time of plasma etching. Based on this, pure Si NW arrays with controllable geometry are generated. Then the oxide dynamic of Si NW is analyzed by the extended Deal-Grove model. By control, the initial Si NWs and the thermal oxidation time, the well-aligned Si/SiO composite NW arrays with controllable geometry are obtained.
ISSN:1931-7573
DOI:10.1186/s11671-017-1883-5