Strain controlled switching effects in phosphorene and GeS

By performing first principles calculations within the combined approach of density functional theory and nonequilibrium Green's function technique, we have designed some nanoelectronic devices to explore the ferroelastic switching of phosphorene and phosphorene analogs GeS. With the structure...

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Bibliographic Details
Published in:Nanotechnology 2017-10, Vol.28 (43), p.435202-435202
Main Authors: Li, B W, Wang, Y, Xie, Y Q, Zhu, L, Yao, K L
Format: Article
Language:English
Subjects:
ferroelastic switching
nonequilibrium Green's function technique
phosphorene
phosphorene analogs GeS
transport properties
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Summary:By performing first principles calculations within the combined approach of density functional theory and nonequilibrium Green's function technique, we have designed some nanoelectronic devices to explore the ferroelastic switching of phosphorene and phosphorene analogs GeS. With the structure swapping along the zigzag direction and armchair direction, band gap transformed at different states due to their anisotropic phosphorene-like structure. From the initial state to the middle state, the band gap becomes progressively smaller, after that, it becomes wide. By analyzing transmission coefficients, it is found that the transport properties of phosphorene and GeS can be controlled by a uniaxial strain. The results also manifest that GeS has great potential to fabricate ferroic nonvolatile memory devices, because its relatively high on/off transmission coefficient ratio (∼1000) between the two stable ferroelastic states.
ISSN:0957-4484
1361-6528
DOI:10.1088/1361-6528/aa87ff