The electron-phonon interaction at deep Bi 2 Te 3 -semiconductor interfaces from Brillouin light scattering

It is shown that the electron-phonon interaction at a conducting interface between a topological insulator thin film and a semiconductor substrate can be directly probed by means of high-resolution Brillouin light scattering (BLS). The observation of Kohn anomalies in the surface phonon dispersion c...

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Bibliographic Details
Published in:Scientific reports 2017-11, Vol.7 (1), p.16449
Main Authors: Wiesner, M, Trzaskowska, A, Mroz, B, Charpentier, S, Wang, S, Song, Y, Lombardi, F, Lucignano, P, Benedek, G, Campi, D, Bernasconi, M, Guinea, F, Tagliacozzo, A
Format: Article
Language:English
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Summary:It is shown that the electron-phonon interaction at a conducting interface between a topological insulator thin film and a semiconductor substrate can be directly probed by means of high-resolution Brillouin light scattering (BLS). The observation of Kohn anomalies in the surface phonon dispersion curves of a 50 nm thick Bi Te film on GaAs, besides demonstrating important electron-phonon coupling effects in the GHz frequency domain, shows that information on deep interface electrons can be obtained by tuning the penetration depth of optically-generated surface phonons so as to selectively probe the interface region, as in a sort of quantum sonar.
ISSN:2045-2322