The electron-phonon interaction at deep Bi 2 Te 3 -semiconductor interfaces from Brillouin light scattering

It is shown that the electron-phonon interaction at a conducting interface between a topological insulator thin film and a semiconductor substrate can be directly probed by means of high-resolution Brillouin light scattering (BLS). The observation of Kohn anomalies in the surface phonon dispersion c...

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Published in:Scientific reports 2017-11, Vol.7 (1), p.16449
Main Authors: Wiesner, M, Trzaskowska, A, Mroz, B, Charpentier, S, Wang, S, Song, Y, Lombardi, F, Lucignano, P, Benedek, G, Campi, D, Bernasconi, M, Guinea, F, Tagliacozzo, A
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creator Wiesner, M
Trzaskowska, A
Mroz, B
Charpentier, S
Wang, S
Song, Y
Lombardi, F
Lucignano, P
Benedek, G
Campi, D
Bernasconi, M
Guinea, F
Tagliacozzo, A
description It is shown that the electron-phonon interaction at a conducting interface between a topological insulator thin film and a semiconductor substrate can be directly probed by means of high-resolution Brillouin light scattering (BLS). The observation of Kohn anomalies in the surface phonon dispersion curves of a 50 nm thick Bi Te film on GaAs, besides demonstrating important electron-phonon coupling effects in the GHz frequency domain, shows that information on deep interface electrons can be obtained by tuning the penetration depth of optically-generated surface phonons so as to selectively probe the interface region, as in a sort of quantum sonar.
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title The electron-phonon interaction at deep Bi 2 Te 3 -semiconductor interfaces from Brillouin light scattering
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