Scandium doping brings speed improvement in Sb 2 Te alloy for phase change random access memory application

Phase change random access memory (PCRAM) has gained much attention as a candidate for nonvolatile memory application. To develop PCRAM materials with better properties, especially to draw closer to dynamic random access memory (DRAM), the key challenge is to research new high-speed phase change mat...

Full description

Saved in:
Bibliographic Details
Published in:Scientific reports 2018-05, Vol.8 (1), p.6839
Main Authors: Chen, Xin, Zheng, Yonghui, Zhu, Min, Ren, Kun, Wang, Yong, Li, Tao, Liu, Guangyu, Guo, Tianqi, Wu, Lei, Liu, Xianqiang, Cheng, Yan, Song, Zhitang
Format: Article
Language:English
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Phase change random access memory (PCRAM) has gained much attention as a candidate for nonvolatile memory application. To develop PCRAM materials with better properties, especially to draw closer to dynamic random access memory (DRAM), the key challenge is to research new high-speed phase change materials. Here, Scandium (Sc) has been found it is helpful to get high-speed and good stability after doping in Sb Te alloy. Sc Sb Te based PCRAM cell can achieve reversible switching by applying even 6 ns voltage pulse experimentally. And, Sc doping not only promotes amorphous stability but also improves the endurance ability comparing with pure Sb Te alloy. Moreover, according to DFT calculations, strong Sc-Te bonds lead to the rigidity of Sc centered octahedrons, which may act as crystallization precursors in recrystallization process to boost the set speed.
ISSN:2045-2322
DOI:10.1038/s41598-018-25215-z