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Observation of quantum topological Hall effect in the Weyl semimetal candidate HgSe

The magnetoresistance (MR) and Hall effect of a single HgSe crystal with an extremely low electron concentration of 8.8  ×  1015 cm−3 were studied in a quantising magnetic field applied both along and across the direction of the electric current. As the result, a broad plateau was discovered in the...

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Bibliographic Details
Published in:Journal of physics. Condensed matter 2019-10, Vol.31 (40), p.405706-405706
Main Authors: Lonchakov, A T, Bobin, S B, Deryushkin, V V, Neverov, V N
Format: Article
Language:English
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Summary:The magnetoresistance (MR) and Hall effect of a single HgSe crystal with an extremely low electron concentration of 8.8  ×  1015 cm−3 were studied in a quantising magnetic field applied both along and across the direction of the electric current. As the result, a broad plateau was discovered in the ordinary (transverse) Hall resistance in the quantum limit. Within a framework of quantum spin Hall effect for an inversion breaking Weyl semimetal, we associate this plateau with a contribution to Hall conductivity from Chern insulator edge states when only a zero Landau level is occupied. In addition to the plateau in the quantum limit, we also detected a well-developed plateau-like behaviour in a phenomenologically-introduced 'longitudinal' Hall resistivity. In the 'longitudinal' Hall conductivity, a step-like behaviour was revealed, which we identify with the discovery of half-integer quantum spin Hall effect in HgSe. This effect, being purely topological in origin, supplements the non-trivial Weyl semimetal physics and may serve as a promising magnetotransport method for the detection of Weyl nodes in a studied material.
ISSN:0953-8984
1361-648X
DOI:10.1088/1361-648X/ab2b30