A kinetic-inductance-based superconducting memory element with shunting and sub-nanosecond write times

We present a kinetic-inductance-based superconducting memory element with non-destructive readout, femtojoule read and write energies, both read and write shunts, which is writeable with pulses shorter than 400 ps. The element utilizes both a high-kinetic-inductance layer made from tungsten silicide...

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Bibliographic Details
Published in:Superconductor science & technology 2019-01, Vol.32 (1), p.15005
Main Authors: McCaughan, Adam N, Toomey, Emily, Schneider, Michael, Berggren, Karl K, Nam, Sae Woo
Format: Article
Language:English
Subjects:
constriction
memory
nanowire
nMem
SFQ
shunting
yTron
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Summary:We present a kinetic-inductance-based superconducting memory element with non-destructive readout, femtojoule read and write energies, both read and write shunts, which is writeable with pulses shorter than 400 ps. The element utilizes both a high-kinetic-inductance layer made from tungsten silicide as well as a low-kinetic-inductance layer made from niobium. By using tungsten silicide-which has a long (20 ns) thermal time constant-and measuring bit error rates from 10 MHz to 1 GHz, we were able to verify that the thin-film elements could be operated at a data rate at least as fast as the material thermal time constant with a bit error ratio less than 10−6. We also analyze the margins of the device, and outline the characteristics by which a more efficient device may be designed.
ISSN:0953-2048
1361-6668
DOI:10.1088/1361-6668/aae50d