Weak Antilocalization and Anisotropic Magnetoresistance as a Probe of Surface States in Topological Bi 2 Te x Se 3-x Thin Films

Topological materials, such as the quintessential topological insulators in the Bi X family (X = O, S, Se, Te), are extremely promising for beyond Moore's Law computing applications where alternative state variables and energy efficiency are prized. It is essential to understand how the topolog...

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Bibliographic Details
Published in:Scientific reports 2020-03, Vol.10 (1), p.4845
Main Authors: Stephen, Gregory M, Vail, Owen A, Lu, Jiwei, Beck, William A, Taylor, Patrick J, Friedman, Adam L
Format: Article
Language:English
Online Access:Get full text
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Summary:Topological materials, such as the quintessential topological insulators in the Bi X family (X = O, S, Se, Te), are extremely promising for beyond Moore's Law computing applications where alternative state variables and energy efficiency are prized. It is essential to understand how the topological nature of these materials changes with growth conditions and, more specifically, chalcogen content. In this study, we investigate the evolution of the magnetoresistance of Bi Te Se for varying chalcogen ratios and constant growth conditions as a function of both temperature and angle of applied field. The contribution of 2D and 3D weak antilocalization are investigated by utilizing the Tkachov-Hankiewicz model and Hakami-Larkin-Nagaoka models of magnetoconductance.
ISSN:2045-2322
DOI:10.1038/s41598-020-61672-1