Modulating the stacking modes of nanosized metal-organic frameworks by morphology engineering for isomer separation

Modulating different stacking modes of nanoscale metal-organic frameworks (MOFs) introduces different properties and functionalities but remains a great challenge. Here, we describe a morphology engineering method to modulate the stacking modes of nanoscale NU-901. The nanoscale NU-901 is stacked th...

Full description

Saved in:
Bibliographic Details
Published in:Chemical science (Cambridge) 2021-02, Vol.12 (11), p.414-411
Main Authors: Xu, Ming, Meng, Sha-Sha, Cai, Peiyu, Tang, Wen-Qi, Yin, Yun-Dong, Powell, Joshua A, Zhou, Hong-Cai, Gu, Zhi-Yuan
Format: Article
Language:English
Subjects:
Chemistry
Metal-organic frameworks
Morphology
Nanoparticles
Nanostructure
Separation
Stacking
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Modulating different stacking modes of nanoscale metal-organic frameworks (MOFs) introduces different properties and functionalities but remains a great challenge. Here, we describe a morphology engineering method to modulate the stacking modes of nanoscale NU-901. The nanoscale NU-901 is stacked through solvent removal after one-pot solvothermal synthesis, in which different morphologies from nanosheets (NS) to interpenetrated nanosheets (I-NS) and nanoparticles (NP) were obtained successfully. The stacked NU-901-NS, NU-901-I-NS, and NU-901-NP exhibited relatively aligned stacking, random stacking, and close packing, respectively. The three stacked nanoscale NU-901 exhibited different separation abilities and all showed better performance than bulk phase NU-901. Our work provides a new morphology engineering route for the modulation of the stacking modes of nano-sized MOFs and improves the separation abilities of MOFs. A morphology engineering method was utilized to modulate the stacking modes of three nano-NU-901 materials, leading to different separation abilities for isomers.
ISSN:2041-6520
2041-6539
DOI:10.1039/d0sc06747d