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Vacancy-defect modulated pathway of photoreduction of CO 2 on single atomically thin AgInP 2 S 6 sheets into olefiant gas
Artificial photosynthesis, light-driving CO conversion into hydrocarbon fuels, is a promising strategy to synchronously overcome global warming and energy-supply issues. The quaternary AgInP S atomic layer with the thickness of ~ 0.70 nm were successfully synthesized through facile ultrasonic exfoli...
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Published in: | Nature communications 2021-08, Vol.12 (1), p.4747 |
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container_title | Nature communications |
container_volume | 12 |
creator | Gao, Wa Li, Shi He, Huichao Li, Xiaoning Cheng, Zhenxiang Yang, Yong Wang, Jinlan Shen, Qing Wang, Xiaoyong Xiong, Yujie Zhou, Yong Zou, Zhigang |
description | Artificial photosynthesis, light-driving CO
conversion into hydrocarbon fuels, is a promising strategy to synchronously overcome global warming and energy-supply issues. The quaternary AgInP
S
atomic layer with the thickness of ~ 0.70 nm were successfully synthesized through facile ultrasonic exfoliation of the corresponding bulk crystal. The sulfur defect engineering on this atomic layer through a H
O
etching treatment can excitingly change the CO
photoreduction reaction pathway to steer dominant generation of ethene with the yield-based selectivity reaching ~73% and the electron-based selectivity as high as ~89%. Both DFT calculation and in-situ FTIR spectra demonstrate that as the introduction of S vacancies in AgInP
S
causes the charge accumulation on the Ag atoms near the S vacancies, the exposed Ag sites can thus effectively capture the forming *CO molecules. It makes the catalyst surface enrich with key reaction intermediates to lower the C-C binding coupling barrier, which facilitates the production of ethene. |
doi_str_mv | 10.1038/s41467-021-25068-7 |
format | article |
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conversion into hydrocarbon fuels, is a promising strategy to synchronously overcome global warming and energy-supply issues. The quaternary AgInP
S
atomic layer with the thickness of ~ 0.70 nm were successfully synthesized through facile ultrasonic exfoliation of the corresponding bulk crystal. The sulfur defect engineering on this atomic layer through a H
O
etching treatment can excitingly change the CO
photoreduction reaction pathway to steer dominant generation of ethene with the yield-based selectivity reaching ~73% and the electron-based selectivity as high as ~89%. Both DFT calculation and in-situ FTIR spectra demonstrate that as the introduction of S vacancies in AgInP
S
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S
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O
etching treatment can excitingly change the CO
photoreduction reaction pathway to steer dominant generation of ethene with the yield-based selectivity reaching ~73% and the electron-based selectivity as high as ~89%. Both DFT calculation and in-situ FTIR spectra demonstrate that as the introduction of S vacancies in AgInP
S
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conversion into hydrocarbon fuels, is a promising strategy to synchronously overcome global warming and energy-supply issues. The quaternary AgInP
S
atomic layer with the thickness of ~ 0.70 nm were successfully synthesized through facile ultrasonic exfoliation of the corresponding bulk crystal. The sulfur defect engineering on this atomic layer through a H
O
etching treatment can excitingly change the CO
photoreduction reaction pathway to steer dominant generation of ethene with the yield-based selectivity reaching ~73% and the electron-based selectivity as high as ~89%. Both DFT calculation and in-situ FTIR spectra demonstrate that as the introduction of S vacancies in AgInP
S
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source | Publicly Available Content Database; Nature Journals Online; PubMed Central; Springer Nature - nature.com Journals - Fully Open Access |
title | Vacancy-defect modulated pathway of photoreduction of CO 2 on single atomically thin AgInP 2 S 6 sheets into olefiant gas |
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