Superfluorescence of Sub-Band States in C-Plane In 0.1 Ga 0.9 N/GaN Multiple-QWs

• Published in: Nanomaterials (Basel, Switzerland) Switzerland), 2022-01, Vol.12 (3)
• Main Authors: Ding, Cairong, Lv, Zesheng, Zeng, Xueran, Zhang, Baijun
• Format: Article
• Language: English
• ISSN: 2079-4991; 2079-4991

Superfluorescence is a collective emission from quantum coherent emitters due to quantum fluctuations. This is characterized by the existence of the delay time (τD) for the emitters coupling and phase-synchronizing to each other spontaneously. Here we report the observation of superfluorescence in c-plane In Ga N/GaN multiple-quantum wells by time-integrated and time-resolved photoluminescence spectroscopy under higher excitation fluences of the 267 nm laser and at room temperature, showing a characteristic τD from 79 ps to 62 ps and the ultrafast radiative decay (7.5 ps) after a burst of photons. Time-resolved traces present a small quantum oscillation from coupled In Ga N/GaN multiple-quantum wells. The superfluorescence is attributed to the radiative recombination of coherent emitters distributing on strongly localized subband states, → or → in 3nm width multiple-quantum wells. Our work paves the way for deepening the understanding of the emission mechanism in the In Ga N/GaN quantum well at a higher injected carrier density.