A novel supramolecular Zn()-metallogel: an efficient microelectronic semiconducting device application

A unique strategy for the synthesis of a supramolecular metallogel employing zinc ions and adipic acid in DMF medium has been established at room temperature. Rheological analysis was used to investigate the mechanical characteristics of the supramolecular Zn( ii )-metallogel. Field emission scannin...

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Bibliographic Details
Published in:RSC advances 2023-01, Vol.13 (4), p.2561-2569
Main Authors: Karmakar, Kripasindhu, Dey, Arka, Dhibar, Subhendu, Sahu, Rajib, Bhattacharjee, Subham, Karmakar, Priya, Chatterjee, Priyajit, Mondal, Aniruddha, Saha, Bidyut
Format: Article
Language:English
Subjects:
Electrical junctions
Electrical properties
Electrical resistivity
Electron microscopy
Emission analysis
Field emission microscopy
Mechanical properties
Rheological properties
Room temperature
Schottky diodes
Thin films
Zinc
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Summary:A unique strategy for the synthesis of a supramolecular metallogel employing zinc ions and adipic acid in DMF medium has been established at room temperature. Rheological analysis was used to investigate the mechanical characteristics of the supramolecular Zn( ii )-metallogel. Field emission scanning electron microscopy and transmission electron microscopy were used to analyse the hexagonal shape morphological features of the Zn( ii )-metallogel. Interestingly, the electrical conductivity is observed in the electronic device with Zn( ii )-metallogel based metal-semiconductor (MS) junctions. All aspects of the metallogel's electrical properties were investigated. The electrical conductivity of the metallogel-based thin film device was 7.38 × 10 −5 S m −1 . The synthesised Zn( ii )-metallogel based device was investigated for its semi-conductive properties, such as its Schottky barrier diode nature. Adipic acid, used as a low molecular weight gelator to fabricate a novel supramolecular metallogel of Zn( ii )-ions in DMF medium, gives an excellent microelectronic device of a Schottky barrier diode at room temperature.
ISSN:2046-2069
2046-2069
DOI:10.1039/d2ra07374a