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A novel supramolecular Zn()-metallogel: an efficient microelectronic semiconducting device application
A unique strategy for the synthesis of a supramolecular metallogel employing zinc ions and adipic acid in DMF medium has been established at room temperature. Rheological analysis was used to investigate the mechanical characteristics of the supramolecular Zn( ii )-metallogel. Field emission scannin...
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| Published in: | RSC advances 2023-01, Vol.13 (4), p.2561-2569 |
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| Main Authors: | , , , , , , , , |
| Format: | Article |
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| cited_by | cdi_FETCH-LOGICAL-c373t-9e2007cb01c96aff88fdf49da352d9da8053164afc4f3815cc42d67eb4880ec3 |
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| cites | cdi_FETCH-LOGICAL-c373t-9e2007cb01c96aff88fdf49da352d9da8053164afc4f3815cc42d67eb4880ec3 |
| container_end_page | 2569 |
| container_issue | 4 |
| container_start_page | 2561 |
| container_title | RSC advances |
| container_volume | 13 |
| creator | Karmakar, Kripasindhu Dey, Arka Dhibar, Subhendu Sahu, Rajib Bhattacharjee, Subham Karmakar, Priya Chatterjee, Priyajit Mondal, Aniruddha Saha, Bidyut |
| description | A unique strategy for the synthesis of a supramolecular metallogel employing zinc ions and adipic acid in DMF medium has been established at room temperature. Rheological analysis was used to investigate the mechanical characteristics of the supramolecular Zn(
ii
)-metallogel. Field emission scanning electron microscopy and transmission electron microscopy were used to analyse the hexagonal shape morphological features of the Zn(
ii
)-metallogel. Interestingly, the electrical conductivity is observed in the electronic device with Zn(
ii
)-metallogel based metal-semiconductor (MS) junctions. All aspects of the metallogel's electrical properties were investigated. The electrical conductivity of the metallogel-based thin film device was 7.38 × 10
−5
S m
−1
. The synthesised Zn(
ii
)-metallogel based device was investigated for its semi-conductive properties, such as its Schottky barrier diode nature.
Adipic acid, used as a low molecular weight gelator to fabricate a novel supramolecular metallogel of Zn(
ii
)-ions in DMF medium, gives an excellent microelectronic device of a Schottky barrier diode at room temperature. |
| doi_str_mv | 10.1039/d2ra07374a |
| format | article |
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ii
)-metallogel. Field emission scanning electron microscopy and transmission electron microscopy were used to analyse the hexagonal shape morphological features of the Zn(
ii
)-metallogel. Interestingly, the electrical conductivity is observed in the electronic device with Zn(
ii
)-metallogel based metal-semiconductor (MS) junctions. All aspects of the metallogel's electrical properties were investigated. The electrical conductivity of the metallogel-based thin film device was 7.38 × 10
−5
S m
−1
. The synthesised Zn(
ii
)-metallogel based device was investigated for its semi-conductive properties, such as its Schottky barrier diode nature.
Adipic acid, used as a low molecular weight gelator to fabricate a novel supramolecular metallogel of Zn(
ii
)-ions in DMF medium, gives an excellent microelectronic device of a Schottky barrier diode at room temperature.</description><identifier>ISSN: 2046-2069</identifier><identifier>EISSN: 2046-2069</identifier><identifier>DOI: 10.1039/d2ra07374a</identifier><identifier>PMID: 36741164</identifier><language>eng</language><publisher>England: Royal Society of Chemistry</publisher><subject>Electrical junctions ; Electrical properties ; Electrical resistivity ; Electron microscopy ; Emission analysis ; Field emission microscopy ; Mechanical properties ; Rheological properties ; Room temperature ; Schottky diodes ; Thin films ; Zinc</subject><ispartof>RSC advances, 2023-01, Vol.13 (4), p.2561-2569</ispartof><rights>This journal is © The Royal Society of Chemistry.</rights><rights>Copyright Royal Society of Chemistry 2023</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c373t-9e2007cb01c96aff88fdf49da352d9da8053164afc4f3815cc42d67eb4880ec3</citedby><cites>FETCH-LOGICAL-c373t-9e2007cb01c96aff88fdf49da352d9da8053164afc4f3815cc42d67eb4880ec3</cites><orcidid>0000-0002-9683-1540 ; 0000-0002-1222-2423 ; 0000-0001-6711-0763 ; 0000-0002-2285-087X</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/36741164$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Karmakar, Kripasindhu</creatorcontrib><creatorcontrib>Dey, Arka</creatorcontrib><creatorcontrib>Dhibar, Subhendu</creatorcontrib><creatorcontrib>Sahu, Rajib</creatorcontrib><creatorcontrib>Bhattacharjee, Subham</creatorcontrib><creatorcontrib>Karmakar, Priya</creatorcontrib><creatorcontrib>Chatterjee, Priyajit</creatorcontrib><creatorcontrib>Mondal, Aniruddha</creatorcontrib><creatorcontrib>Saha, Bidyut</creatorcontrib><title>A novel supramolecular Zn()-metallogel: an efficient microelectronic semiconducting device application</title><title>RSC advances</title><addtitle>RSC Adv</addtitle><description>A unique strategy for the synthesis of a supramolecular metallogel employing zinc ions and adipic acid in DMF medium has been established at room temperature. Rheological analysis was used to investigate the mechanical characteristics of the supramolecular Zn(
ii
)-metallogel. Field emission scanning electron microscopy and transmission electron microscopy were used to analyse the hexagonal shape morphological features of the Zn(
ii
)-metallogel. Interestingly, the electrical conductivity is observed in the electronic device with Zn(
ii
)-metallogel based metal-semiconductor (MS) junctions. All aspects of the metallogel's electrical properties were investigated. The electrical conductivity of the metallogel-based thin film device was 7.38 × 10
−5
S m
−1
. The synthesised Zn(
ii
)-metallogel based device was investigated for its semi-conductive properties, such as its Schottky barrier diode nature.
Adipic acid, used as a low molecular weight gelator to fabricate a novel supramolecular metallogel of Zn(
ii
)-ions in DMF medium, gives an excellent microelectronic device of a Schottky barrier diode at room temperature.</description><subject>Electrical junctions</subject><subject>Electrical properties</subject><subject>Electrical resistivity</subject><subject>Electron microscopy</subject><subject>Emission analysis</subject><subject>Field emission microscopy</subject><subject>Mechanical properties</subject><subject>Rheological properties</subject><subject>Room temperature</subject><subject>Schottky diodes</subject><subject>Thin films</subject><subject>Zinc</subject><issn>2046-2069</issn><issn>2046-2069</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><recordid>eNpdkUtLxDAQgIMoKurFuxLwsgrVPNqk9bb4BkEQT15KNp1IJE1q0gr-e6PrC3OZMPlmmHyD0C4lx5Tw5qRjURHJZalW0CYjpSgYEc3qn_sG2knpmeQjKsoEXUcbXMiSUlFuIjPHPryCw2kaouqDAz05FfGjnx0WPYzKufAE7hQrj8EYqy34EfdWxwCZHWPwVuMEORN8N-nR-ifcwavVgNUwOKvVaIPfRmtGuQQ7X3ELPVxePJxdF7d3Vzdn89tCc8nHogFGiNQLQnUjlDF1bTpTNp3iFetyqEnF89jK6NLwmlZal6wTEhZlXRPQfAvNlm2HGF4mSGPb26TBOeUhTKllMpuiuVBm9OAf-hym6PNwmRIyi-KsytTRksr_TSmCaYdoexXfWkraD__tObuff_qfZ3j_q-W06KH7Qb9tZ2BvCcSkf15_F8jfAatGiqA</recordid><startdate>20230111</startdate><enddate>20230111</enddate><creator>Karmakar, Kripasindhu</creator><creator>Dey, Arka</creator><creator>Dhibar, Subhendu</creator><creator>Sahu, Rajib</creator><creator>Bhattacharjee, Subham</creator><creator>Karmakar, Priya</creator><creator>Chatterjee, Priyajit</creator><creator>Mondal, Aniruddha</creator><creator>Saha, Bidyut</creator><general>Royal Society of Chemistry</general><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>7X8</scope><orcidid>https://orcid.org/0000-0002-9683-1540</orcidid><orcidid>https://orcid.org/0000-0002-1222-2423</orcidid><orcidid>https://orcid.org/0000-0001-6711-0763</orcidid><orcidid>https://orcid.org/0000-0002-2285-087X</orcidid></search><sort><creationdate>20230111</creationdate><title>A novel supramolecular Zn()-metallogel: an efficient microelectronic semiconducting device application</title><author>Karmakar, Kripasindhu ; Dey, Arka ; Dhibar, Subhendu ; Sahu, Rajib ; Bhattacharjee, Subham ; Karmakar, Priya ; Chatterjee, Priyajit ; Mondal, Aniruddha ; Saha, Bidyut</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c373t-9e2007cb01c96aff88fdf49da352d9da8053164afc4f3815cc42d67eb4880ec3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><topic>Electrical junctions</topic><topic>Electrical properties</topic><topic>Electrical resistivity</topic><topic>Electron microscopy</topic><topic>Emission analysis</topic><topic>Field emission microscopy</topic><topic>Mechanical properties</topic><topic>Rheological properties</topic><topic>Room temperature</topic><topic>Schottky diodes</topic><topic>Thin films</topic><topic>Zinc</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Karmakar, Kripasindhu</creatorcontrib><creatorcontrib>Dey, Arka</creatorcontrib><creatorcontrib>Dhibar, Subhendu</creatorcontrib><creatorcontrib>Sahu, Rajib</creatorcontrib><creatorcontrib>Bhattacharjee, Subham</creatorcontrib><creatorcontrib>Karmakar, Priya</creatorcontrib><creatorcontrib>Chatterjee, Priyajit</creatorcontrib><creatorcontrib>Mondal, Aniruddha</creatorcontrib><creatorcontrib>Saha, Bidyut</creatorcontrib><collection>PubMed</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>MEDLINE - Academic</collection><jtitle>RSC advances</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Karmakar, Kripasindhu</au><au>Dey, Arka</au><au>Dhibar, Subhendu</au><au>Sahu, Rajib</au><au>Bhattacharjee, Subham</au><au>Karmakar, Priya</au><au>Chatterjee, Priyajit</au><au>Mondal, Aniruddha</au><au>Saha, Bidyut</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A novel supramolecular Zn()-metallogel: an efficient microelectronic semiconducting device application</atitle><jtitle>RSC advances</jtitle><addtitle>RSC Adv</addtitle><date>2023-01-11</date><risdate>2023</risdate><volume>13</volume><issue>4</issue><spage>2561</spage><epage>2569</epage><pages>2561-2569</pages><issn>2046-2069</issn><eissn>2046-2069</eissn><abstract>A unique strategy for the synthesis of a supramolecular metallogel employing zinc ions and adipic acid in DMF medium has been established at room temperature. Rheological analysis was used to investigate the mechanical characteristics of the supramolecular Zn(
ii
)-metallogel. Field emission scanning electron microscopy and transmission electron microscopy were used to analyse the hexagonal shape morphological features of the Zn(
ii
)-metallogel. Interestingly, the electrical conductivity is observed in the electronic device with Zn(
ii
)-metallogel based metal-semiconductor (MS) junctions. All aspects of the metallogel's electrical properties were investigated. The electrical conductivity of the metallogel-based thin film device was 7.38 × 10
−5
S m
−1
. The synthesised Zn(
ii
)-metallogel based device was investigated for its semi-conductive properties, such as its Schottky barrier diode nature.
Adipic acid, used as a low molecular weight gelator to fabricate a novel supramolecular metallogel of Zn(
ii
)-ions in DMF medium, gives an excellent microelectronic device of a Schottky barrier diode at room temperature.</abstract><cop>England</cop><pub>Royal Society of Chemistry</pub><pmid>36741164</pmid><doi>10.1039/d2ra07374a</doi><tpages>9</tpages><orcidid>https://orcid.org/0000-0002-9683-1540</orcidid><orcidid>https://orcid.org/0000-0002-1222-2423</orcidid><orcidid>https://orcid.org/0000-0001-6711-0763</orcidid><orcidid>https://orcid.org/0000-0002-2285-087X</orcidid><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 2046-2069 |
| ispartof | RSC advances, 2023-01, Vol.13 (4), p.2561-2569 |
| issn | 2046-2069 2046-2069 |
| language | eng |
| recordid | cdi_pubmed_primary_36741164 |
| source | PubMed |
| subjects | Electrical junctions Electrical properties Electrical resistivity Electron microscopy Emission analysis Field emission microscopy Mechanical properties Rheological properties Room temperature Schottky diodes Thin films Zinc |
| title | A novel supramolecular Zn()-metallogel: an efficient microelectronic semiconducting device application |
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