Skyrmion based majority logic gate by voltage controlled magnetic anisotropy in a nanomagnetic device

• Published in: Nanotechnology 2023-05, Vol.34 (22), p.225202
• Main Authors: Paikaray, Bibekananda, Kuchibhotla, Mahathi, Haldar, Arabinda, Murapaka, Chandrasekhar
• Format: Article
• Language: English
• Subjects: magnetic skyrmion; majority logic; skyrmion Hall angle; voltage controlled magnetic anisotropy
• ISSN: 0957-4484; 1361-6528
• DOI: 10.1088/1361-6528/acbeb3

Magnetic skyrmions are topologically protected spin textures and they are suitable for future logic-in-memory applications for energy-efficient, high-speed information processing and computing technologies. In this work, we have demonstrated skyrmion-based 3 bit majority logic gate using micromagnetic simulations. The skyrmion motion is controlled by introducing a that works on voltage controlled magnetic anisotropy. Here, the inhomogeneous magnetic anisotropy behaves as a tunable potential barrier/well that modulates the skyrmion trajectory in the structure for the successful implementation of the majority logic gate. In addition, several other effects such as skyrmion-skyrmion topological repulsion, skyrmion-edge repulsion, spin-orbit torque and skyrmion Hall effect have been shown to govern the logic functionalities. We have systematically presented the robust logic operations by varying the current density, magnetic anisotropy, voltage-controlled gate dimension and geometrical parameters of the logic device. The skyrmion Hall angle is monitored to understand the trajectory and stability of the skyrmion as a function of time in the logic device. The results demonstrate a novel method to achieve majority logic by using voltage controlled magnetic anisotropy which further opens up a new route for skyrmion-based low-power and high-speed computing devices.