Properties of Al x Ga 1-x As grown from a mixed Ga-Bi melt

Thick smoothly graded Al Ga As layers (50-100 µm) are used in light-emitting diode structures and also for creation of high-power photovoltaic converters with side-input of laser radiation. To achieve the required thickness of the Al Ga As layer the high temperature LPE growth technique is required....

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Bibliographic Details
Published in:Scientific reports 2024-01, Vol.14 (1), p.1334
Main Authors: Khvostikova, Olga, Vlasov, Alexey, Ber, Boris, Salii, Roman, Khvostikov, Vladimir
Format: Article
Language:English
Online Access:Get full text
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Summary:Thick smoothly graded Al Ga As layers (50-100 µm) are used in light-emitting diode structures and also for creation of high-power photovoltaic converters with side-input of laser radiation. To achieve the required thickness of the Al Ga As layer the high temperature LPE growth technique is required. However high epitaxial temperature increases the unintentional doping level. Epitaxy from mixed Ga-Bi melts was investigated as a way to solve this problem. It was found that for growing relatively thick Al Ga As layers, it is expedient to use Ga-Bi melts with 20 at% or less bismuth content. SIMS and Hall characterization of Al Ga As layers revealed that the growth of Al Ga As from mixed Ga-Bi melts reduces the background doping level (including carbon) and influences the native defect formation keeping the n-type conductivity. This effect is explained by the changes of the group III and V elements concentrations in the melt as well as Bi incorporation in the lattice.
ISSN:2045-2322