Growth of emergent simple pseudo-binary ferroelectrics and their potential in neuromorphic computing devices

Ferroelectric memory devices such as ferroelectric memristors, ferroelectric tunnel junctions, and field-effect transistors are considered among the most promising candidates for neuromorphic computing devices. The promise arises from their defect-independent switching mechanism, low energy consumpt...

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Bibliographic Details
Published in:Materials horizons 2024-05, Vol.11 (1), p.2355-2371
Main Authors: Jayakrishnan, Ampattu R, Kim, Ji S, Hellenbrand, Markus, Marques, Luís S, MacManus-Driscoll, Judith L, Silva, José P. B
Format: Article
Language:English
Subjects:
Chemistry
CMOS
Coercivity
Compatibility
Endurance
Energy consumption
Ferroelectric materials
Ferroelectricity
Field effect transistors
Materials science
Memory devices
Neuromorphic computing
Power efficiency
Semiconductor devices
Switching
Thin films
Tunnel junctions
Zirconium dioxide
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Summary:Ferroelectric memory devices such as ferroelectric memristors, ferroelectric tunnel junctions, and field-effect transistors are considered among the most promising candidates for neuromorphic computing devices. The promise arises from their defect-independent switching mechanism, low energy consumption and high power efficiency, and important properties being aimed for are reliable switching at high speed, excellent endurance, retention, and compatibility with complementary metal-oxide-semiconductor (CMOS) technology. Binary or doped binary materials have emerged over conventional complex-composition ferroelectrics as an optimum solution, particularly in terms of CMOS compatibility. The current state-of-the-art route to achieving superlative ferroelectric performance of binary oxides is to induce ferroelectricity at the nanoscale, e.g. , in ultra-thin films of doped HfO 2 , ZrO 2 , Zn 1− x Mg x O, A l− x Sc x N, and Bi 1− x Sm x O 3 . This short review article focuses on the materials science of emerging new ferroelectric materials, including their different properties such as remanent polarization, coercive field, endurance, etc. The potential of these materials is discussed for neuromorphic applications. Ferroelectric memory devices such as ferroelectric memristors, ferroelectric tunnel junctions, and field-effect transistors are considered among the most promising candidates for neuromorphic computing devices.
ISSN:2051-6347
2051-6355
DOI:10.1039/d4mh00153b