Photoswitchable optoelectronic properties of 2D MoSe 2 /diarylethene hybrid structures

• Published in: Scientific reports 2024-03, Vol.14 (1), p.7325
• Main Authors: Park, Sewon, Ji, Jaehoon, Cunningham, Connor, Pillai, Srajan, Rouillon, Jean, Benitez-Martin, Carlos, Fang, Mengqi, Yang, Eui-Hyeok, Andréasson, Joakim, You, Jeong Ho, Choi, Jong Hyun
• Format: Article
• Language: English
• ISSN: 2045-2322
• DOI: 10.1038/s41598-024-57479-z

The ability to modulate optical and electrical properties of two-dimensional (2D) semiconductors has sparked considerable interest in transition metal dichalcogenides (TMDs). Herein, we introduce a facile strategy for modulating optoelectronic properties of monolayer MoSe with external light. Photochromic diarylethene (DAE) molecules formed a 2-nm-thick uniform layer on MoSe , switching between its closed- and open-form isomers under UV and visible irradiation, respectively. We have discovered that the closed DAE conformation under UV has its lowest unoccupied molecular orbital energy level lower than the conduction band minimum of MoSe , which facilitates photoinduced charge separation at the hybrid interface and quenches photoluminescence (PL) from monolayer flakes. In contrast, open isomers under visible light prevent photoexcited electron transfer from MoSe to DAE, thus retaining PL emission properties. Alternating UV and visible light repeatedly show a dynamic modulation of optoelectronic signatures of MoSe . Conductive atomic force microscopy and Kelvin probe force microscopy also reveal an increase in conductivity and work function of MoSe /DAE with photoswitched closed-form DAE. These results may open new opportunities for designing new phototransistors and other 2D optoelectronic devices.