Simultaneous mapping of cathodoluminescence spectra and backscatter diffraction patterns in a scanning electron microscope

Electron backscatter diffraction and cathodoluminescence are complementary scanning electron microscopy modes widely used in the characterisation of semiconductor films, respectively revealing the strain state of a crystalline material and the effect of this strain on the light emission from the sam...

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Bibliographic Details
Published in:Nanotechnology 2024-09, Vol.35 (39), p.395704
Main Authors: Edwards, Paul R, Naresh Kumar, G, McKendry, Jonathan J D, Xie, Enyuan, Gu, Erdan, Dawson, Martin D, Martin, Robert W
Format: Article
Language:English
Subjects:
cathodoluminescence
EBSD
hyperspectral
microLED
strain
ultraviolet
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Summary:Electron backscatter diffraction and cathodoluminescence are complementary scanning electron microscopy modes widely used in the characterisation of semiconductor films, respectively revealing the strain state of a crystalline material and the effect of this strain on the light emission from the sample. Conflicting beam, sample and detector geometries have meant it is not generally possible to acquire the two signals together during the same scan. Here, we present a method of achieving this simultaneous acquisition, by collecting the light emission through a transparent sample substrate. We apply this combination of techniques to investigate the strain field and resultant emission wavelength variation in a deep-ultraviolet micro-LED. For such compatible samples, this approach has the benefits of avoiding image alignment issues and minimising beam damage effects.
ISSN:0957-4484
1361-6528
1361-6528
DOI:10.1088/1361-6528/ad5dba