Mechanism of local electric oxidation on two-dimensional MoS 2 for resistive memory application

The manipulation and mechanism of two-dimensional (2D) transition metal dichalcogenides (TMDs) by external electric field are significant to the photoelectric properties. Herein, the 2D MoS nanosheets were oxidized to form MoS -MoO local heterojunctions by an electric field, applied in multistable m...

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Bibliographic Details
Published in:iScience 2024-10, Vol.27 (10), p.110819
Main Authors: Dong, Hui, Mu, Junzheng, Peng, Jinfeng, Zheng, Xuejun, Chu, Liang
Format: Article
Language:English
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Summary:The manipulation and mechanism of two-dimensional (2D) transition metal dichalcogenides (TMDs) by external electric field are significant to the photoelectric properties. Herein, the 2D MoS nanosheets were oxidized to form MoS -MoO local heterojunctions by an electric field, applied in multistable memristors for the proposal of NanoQR code. A modified thermal oxidation model was derived to reveal the mechanism of local electric oxidation on 2D MoS . From current-voltage curves, the barrier height of the MoS device showed an increase of 0.39 eV due to local oxidation after applying voltage for 480 s. Based on density-functional theory, the increase of barrier height was calculated as 0.38 eV between MoS -MoS  and MoS -MoO supercells. The 2D MoS -MoO local heterojunctions were further applied as multistable memory storage at the nanoscale. The findings suggest a novel strategy for controlling local electric oxidation on 2D TMDs to manipulate the properties for the application of photoelectric memory nanodevices.
ISSN:2589-0042