Site-controlled growth of In(Ga)As/GaAs quantum dots on patterned substrate

In(Ga)As quantum dot (QD) with uniform size and controlled sites have great potential in optical communications and quantum computing. In this review, we focus on the site-controlled preparation of In(Ga)As quantum dot arrays based on patterned substrates, including the improvements made by the rese...

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Bibliographic Details
Published in:Nanotechnology 2024-11, Vol.36 (5), p.52001
Main Authors: Zhao, Xiaoyang, Liu, Wen, Bao, Yidi, Chen, Xiaoling, Ji, Chunxue, Yang, Guiqiang, Wei, Bo, Yang, Fuhua, Wang, Xiaodong
Format: Article
Language:English
Subjects:
In(Ga)As quantum dot (QD) arrays
molecular beam epitaxy (MBE)
patterned substrates
site-controlled growth
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Summary:In(Ga)As quantum dot (QD) with uniform size and controlled sites have great potential in optical communications and quantum computing. In this review, we focus on the site-controlled preparation of In(Ga)As quantum dot arrays based on patterned substrates, including the improvements made by the researchers to enhance the quantum dot site-control capability and optical quality. Based on the current research on site-controlled In(Ga)As QDs, it has been possible to grow uniformly ordered In(Ga)As QD arrays, in which the size, morphology, and nucleus location of each quantum dot can be precisely controlled. In addition, the study of deoxidation treatment of patterned substrates has led to the performance enhancement of the prepared QD arrays. Finally, we propose that the future development of site-controlled In(Ga)As QD arrays lies in improving the optical quality and tuning their emission wavelength to the telecommunication band.
ISSN:0957-4484
1361-6528
1361-6528
DOI:10.1088/1361-6528/ad8d61