Janus Electronic Devices with Ultrathin High-κ Gate Dielectric Directly Integrated on 1T'-MoTe 2

Integrating high-quality dielectrics with two-dimensional (2D) transition metal chalcogenides (TMDCs) is crucial for high-performance electronics. However, the lack of dangling bonds on 2D material surfaces complicates direct dielectric deposition. We propose using atomic layer deposition (ALD) to i...

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Bibliographic Details
Published in:ACS applied materials & interfaces 2024-12, Vol.16 (49), p.68211
Main Authors: Chen, Enzi, Zhu, Qing, Duan, Yaoyu, Tang, Junhao, Zhan, Runze, Huang, Jingwen, Wan, Xi, Chen, Kun, Deng, Shaozhi
Format: Article
Language:English
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Summary:Integrating high-quality dielectrics with two-dimensional (2D) transition metal chalcogenides (TMDCs) is crucial for high-performance electronics. However, the lack of dangling bonds on 2D material surfaces complicates direct dielectric deposition. We propose using atomic layer deposition (ALD) to integrate ultrathin high-κ dielectric directly on 1T'-MoTe surfaces, facilitating the creation of high-performance back-gated field-effect transistors (FETs). Exploiting 1T'-MoTe 's natural oxidation in ambient conditions, we directly deposit dense and uniform HfO dielectric films below 5 nm, achieving an equivalent oxide thickness (EOT) of 0.97 nm. The resulting back-gate transistors, with a monolayer MoSSe on HfO /1T'-MoTe , show a current on/off ratio over 10 and operate at low voltages (
ISSN:1944-8252