Loading…

Breaking the Trade-Off Between Mobility and On-Off Ratio in Oxide Transistors

Amorphous oxide semiconductors (AOS) are pivotal for next-generation electronics due to their high electron mobility and excellent optical properties. However, In O , a key material in this family, encounters significant challenges in balancing high mobility and effective switching as its thickness...

Full description

Saved in:
Bibliographic Details
Published in:Advanced materials (Weinheim) 2024-12, p.e2413212
Main Authors: Chang, Yu-Cheng, Wang, Sung-Tsun, Lee, Yung-Ting, Huang, Ching-Shuan, Hsu, Chu-Hsiu, Weng, Tzu-Ting, Huang, Chang-Chang, Chen, Chien-Wei, Chou, Tsung-Te, Chang, Chan-Yuen, Woon, Wei-Yen, Lin, Chun-Liang, Sun, Jack Yuan-Chen, Lien, Der-Hsien
Format: Article
Language:English
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Amorphous oxide semiconductors (AOS) are pivotal for next-generation electronics due to their high electron mobility and excellent optical properties. However, In O , a key material in this family, encounters significant challenges in balancing high mobility and effective switching as its thickness is scaled down to nanometer dimensions. The high electron density in ultra-thin In O hinders its ability to turn off effectively, leading to a critical trade-off between mobility and the on-current (I )/off-current (I ) ratio. This study introduces a mild CF plasma doping technique that effectively reduces electron density in 10 nm In O at a low processing temperature of 70 °C, achieving a high mobility of 104 cm V⁻¹ s⁻¹ and an I /I ratio exceeding 10⁸. A subsequent low-temperature post-annealing further improves the critical reliability and stability of CF -doped In O without raising the thermal budget, making this technique suitable for monolithic three-dimensional (3D) integration. Additionally, its application is demonstrated in In O depletion-load inverters, highlighting its potential for advanced logic circuits and broader electronic and optoelectronic applications.
ISSN:1521-4095
1521-4095
DOI:10.1002/adma.202413212