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Breaking the Trade-Off Between Mobility and On-Off Ratio in Oxide Transistors
Amorphous oxide semiconductors (AOS) are pivotal for next-generation electronics due to their high electron mobility and excellent optical properties. However, In O , a key material in this family, encounters significant challenges in balancing high mobility and effective switching as its thickness...
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Published in: | Advanced materials (Weinheim) 2024-12, p.e2413212 |
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Main Authors: | , , , , , , , , , , , , , |
Format: | Article |
Language: | English |
Online Access: | Get full text |
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Summary: | Amorphous oxide semiconductors (AOS) are pivotal for next-generation electronics due to their high electron mobility and excellent optical properties. However, In
O
, a key material in this family, encounters significant challenges in balancing high mobility and effective switching as its thickness is scaled down to nanometer dimensions. The high electron density in ultra-thin In
O
hinders its ability to turn off effectively, leading to a critical trade-off between mobility and the on-current (I
)/off-current (I
) ratio. This study introduces a mild CF
plasma doping technique that effectively reduces electron density in 10 nm In
O
at a low processing temperature of 70 °C, achieving a high mobility of 104 cm
V⁻¹ s⁻¹ and an I
/I
ratio exceeding 10⁸. A subsequent low-temperature post-annealing further improves the critical reliability and stability of CF
-doped In
O
without raising the thermal budget, making this technique suitable for monolithic three-dimensional (3D) integration. Additionally, its application is demonstrated in In
O
depletion-load inverters, highlighting its potential for advanced logic circuits and broader electronic and optoelectronic applications. |
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ISSN: | 1521-4095 1521-4095 |
DOI: | 10.1002/adma.202413212 |