Performance optimization of In(Ga)As quantum dot intermediate band solar cells

Quantum dot intermediate band solar cell (QD-IBSC) has high efficiency theoretically. It can absorb photons with energy lower than the bandgap of the semiconductor through the half-filled intermediate band, extending the absorption spectrum of the cell. However, issues in the IBSC, such as the strai...

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Bibliographic Details
Published in:Discover nano 2023-04, Vol.18 (1), p.67-67, Article 67
Main Authors: Yang, Guiqiang, Liu, Wen, Bao, Yidi, Chen, Xiaoling, Ji, Chunxue, Wei, Bo, Yang, Fuhua, Wang, Xiaodong
Format: Article
Language:English
Subjects:
Absorption spectra
Carrier lifetime
Chemistry and Materials Science
Efficiency
Energy
Energy conversion efficiency
Energy gap
Materials Science
Molecular Medicine
Nanochemistry
Nanoscale Science and Technology
Nanotechnology
Nanotechnology and Microengineering
Optimization
Performance enhancement
Photons
Photovoltaic cells
Quantum dots
Radiation
Review
Semiconductors
Solar cells
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Summary:Quantum dot intermediate band solar cell (QD-IBSC) has high efficiency theoretically. It can absorb photons with energy lower than the bandgap of the semiconductor through the half-filled intermediate band, extending the absorption spectrum of the cell. However, issues in the IBSC, such as the strain around multi-stacking QDs, low thermal excitation energy, and short carrier lifetime, lead to its low conversion efficiency. In recent years, many efforts have been made from different aspects. In this paper, we focus on In(Ga)As QD-IBSC, list the experimental technologies used to improve the performance of the cell and review the recent research progress. By analyzing the effects of different technologies on conversion efficiency, the development direction of the In(Ga)As QD-IBSC in the future is proposed.
ISSN:2731-9229
1931-7573
2731-9229
1556-276X
DOI:10.1186/s11671-023-03839-z