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A simulation study of irradiation effect on InAs/GaAsSb type II quantum dot structures

Particles in space cause irradiation damage to the solar cells (SCs), resulting in the degradation of their performance. Quantum dot solar cells (QDSCs) have higher theoretical efficiency and better irradiation resistance than the conventional GaAs SCs, which makes them highly promising for applicat...

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Bibliographic Details
Published in:Heliyon 2024-07, Vol.10 (13), p.e33910, Article e33910
Main Authors: Yang, Guiqiang, Bao, Yidi, Chen, Xiaoling, Ji, Chunxue, Wei, Bo, Liu, Wen, Wang, Xiaodong
Format: Article
Language:English
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Summary:Particles in space cause irradiation damage to the solar cells (SCs), resulting in the degradation of their performance. Quantum dot solar cells (QDSCs) have higher theoretical efficiency and better irradiation resistance than the conventional GaAs SCs, which makes them highly promising for application in space. In this paper, we study the proton irradiation effect on InAs/GaAs0.8Sb0.2 QDSCs by SRIM program. The simulation result shows that the InAs/GaAs0.8Sb0.2 QDSCs have fewer vacancies than GaAs SCs when irradiated with low-energy proton, which indicates that the InAs/GaAs0.8Sb0.2 QDSCs have better anti-irradiation characteristics. The study about displacements per atom and proton concentration in two SCs shows that protons with low energy and high irradiation fluences will cause more serious damage in InAs/GaAs0.8Sb0.2 QDSCs. In addition, the proton incident angle affects the vacancy distribution, while the number of QD layers has little effect on it. •The nuclear stopping power in InAs and GaAsSb is lower than in GaAs.•The of InAs/GaAsSb quantum dot solar cells exhibit superior radiation resistance.•When the low-energy proton incidence angle is low, it hardly has effect on the total number of vacancies in solar cells.
ISSN:2405-8440
2405-8440
DOI:10.1016/j.heliyon.2024.e33910