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A silicon diode-based optoelectronic interface for bidirectional neural modulation

The development of advanced neural modulation techniques is crucial to neuroscience research and neuroengineering applications. Recently, optical-based, nongenetic modulation approaches have been actively investigated to remotely interrogate the nervous system with high precision. Here, we show that...

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Bibliographic Details
Published in:Proceedings of the National Academy of Sciences - PNAS 2024-07, Vol.121 (30), p.e2404164121
Main Authors: Fu, Xin, Hu, Zhengwei, Li, Wenjun, Ma, Liang, Chen, Junyu, Liu, Muyang, Liu, Jie, Hu, Shuhan, Wang, Huachun, Huang, Yunxiang, Tang, Guo, Zhang, Bozhen, Cai, Xue, Wang, Yuqi, Li, Lizhu, Ma, Jian, Shi, Song-Hai, Yin, Lan, Zhang, Hao, Li, Xiaojian, Sheng, Xing
Format: Article
Language:English
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Summary:The development of advanced neural modulation techniques is crucial to neuroscience research and neuroengineering applications. Recently, optical-based, nongenetic modulation approaches have been actively investigated to remotely interrogate the nervous system with high precision. Here, we show that a thin-film, silicon (Si)-based diode device is capable to bidirectionally regulate in vitro and in vivo neural activities upon adjusted illumination. When exposed to high-power and short-pulsed light, the Si diode generates photothermal effects, evoking neuron depolarization and enhancing intracellular calcium dynamics. Conversely, low-power and long-pulsed light on the Si diode hyperpolarizes neurons and reduces calcium activities. Furthermore, the Si diode film mounted on the brain of living mice can activate or suppress cortical activities under varied irradiation conditions. The presented material and device strategies reveal an innovated optoelectronic interface for precise neural modulations.
ISSN:0027-8424
1091-6490
1091-6490
DOI:10.1073/pnas.2404164121