Realizing altermagnetism in two-dimensional metal-organic framework semiconductors with electric-field-controlled anisotropic spin current

• Published in: Chemical science (Cambridge) 2024-08, Vol.15 (34), p.13853-13863
• Main Authors: Che, Yixuan, Lv, Haifeng, Wu, Xiaojun, Yang, Jinlong
• Format: Article
• Language: English
• Subjects: Antiferromagnetism; Calcium; Chemistry; Crystallography; Electric fields; First principles; Group theory; Hall effect; Light elements; Metal-organic frameworks; Organic semiconductors; Rotation; Semiconductors; Spintronics; Splitting; Two dimensional materials
• ISSN: 2041-6520; 2041-6539
• DOI: 10.1039/d4sc04125a

Altermagnets exhibit momentum-dependent spin-splitting in a collinear antiferromagnetic order due to their peculiar crystallographic and magnetic symmetry, resulting in the creation of spin currents with light elements. Here, we report two two-dimensional (2D) metal-organic framework (MOF) semiconductors, M(pyz) 2 (M = Ca and Sr, pyz = pyrazine), which exhibit both altermagnetism and topological nodal point and line by using first-principles calculations and group theory. The altermagnetic 2D MOFs exhibit unconventional spin-splitting and macroscopic zero magnetization caused by 4-fold rotation in crystalline real space and 2-fold rotation in spin space, leading to the generation and control of anisotropic spin currents when an in-plane electric field ( E ) is applied. In particular, pure spin current with the spin Hall effect occurs when E is applied along the angular bisector of the two spin arrangements. Our work indicates the existence of altermagnetic MOF systems and a universal approach to generate electric-field-controlled spin currents for potential applications in antiferromagnetic spintronics. Ground state altermagnetism in two-dimensional metal-organic framework semiconductors M(pyz) 2 (M = Ca and Sr, pyz = pyrazine) protected by 2 4/ 1 m 1 m 2 m spin point group, together with topological properties and in-plane anisotropic spin current.