Approaching Angstrom-Scale Resolution in Lithography Using Low-Molecular-Mass Resists (<500 Da)

Resists that enable high-throughput and high-resolution patterning are essential in driving the semiconductor technology forward. The ultimate patterning performance of a resist in lithography is limited because of the trade-off between resolution, line-width roughness, and sensitivity; improving on...

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Bibliographic Details
Published in:ACS nano 2024-09, Vol.18 (35), p.24076-24094
Main Authors: Saifullah, Mohammad S.M., Rajak, Anil Kumar, Hofhuis, Kevin A., Tiwale, Nikhil, Mahfoud, Zackaria, Testino, Andrea, Karadan, Prajith, Vockenhuber, Michaela, Kazazis, Dimitrios, Valiyaveettil, Suresh, Ekinci, Yasin
Format: Article
Language:English
Subjects:
electron beam lithography
extreme ultraviolet lithography
low-molecular-mass resists
metal oximate
nanofabrication
NANOSCIENCE AND NANOTECHNOLOGY
radical initiator
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Summary:Resists that enable high-throughput and high-resolution patterning are essential in driving the semiconductor technology forward. The ultimate patterning performance of a resist in lithography is limited because of the trade-off between resolution, line-width roughness, and sensitivity; improving one or two of these parameters typically leads to a loss in the third. As the patterned feature sizes approach angstrom scale, the trade-off between these three metrics becomes increasingly hard to resolve and calls for a fundamental rethinking of the resist chemistry. Low-molecular-mass monodispersed metal-containing resists of high atom economy can provide not only very high resolution but also very low line-width roughness without sacrificing sensitivity. Here we describe a modular metal-containing resist platform (molecular mass
ISSN:1936-0851
1936-086X
1936-086X
DOI:10.1021/acsnano.4c03939