Two-dimensional silk

Despite the promise of silk-based devices, the inherent disorder of native silk limits performance. Here, we report highly ordered two-dimensional silk fibroin (SF) films grown epitaxially on van der Waals (vdW) substrates. Using atomic force microscopy, nano-Fourier transform infrared spectroscopy,...

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Bibliographic Details
Published in:Science advances 2024-09, Vol.10 (38), p.eado4142
Main Authors: Shi, Chenyang, Zorman, Marlo, Zhao, Xiao, Salmeron, Miquel B, Pfaendtner, Jim, Liu, Xiang Yang, Zhang, Shuai, De Yoreo, James J
Format: Article
Language:English
Subjects:
Physical and Materials Sciences
Physical Sciences
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Summary:Despite the promise of silk-based devices, the inherent disorder of native silk limits performance. Here, we report highly ordered two-dimensional silk fibroin (SF) films grown epitaxially on van der Waals (vdW) substrates. Using atomic force microscopy, nano-Fourier transform infrared spectroscopy, and molecular dynamics, we show that the films consist of lamellae of SF molecules that exhibit the same secondary structure as the nanocrystallites of native silk. Increasing the SF concentration results in multilayers that grow either by direct assembly of SF molecules into the lamellae or, at high concentrations, along a two-step pathway beginning with a disordered monolayer that then crystallizes. Scanning Kelvin probe measurements show that these films substantially alter the surface potential; thus, they provide a platform for silk-based electronics on vdW solids.
ISSN:2375-2548
2375-2548
DOI:10.1126/sciadv.ado4142