Polarization-Doped InGaN LEDs and Laser Diodes for Broad Temperature Range Operation

This work reports on the possibility of sustaining a stable operation of polarization-doped InGaN light emitters over a particularly broad temperature range. We obtained efficient emission from InGaN light-emitting diodes between 20 K and 295 K and from laser diodes between 77 K and 295 K under cont...

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Bibliographic Details
Published in:Materials 2024-09, Vol.17 (18), p.4502
Main Authors: Aktas, Muhammed, Grzanka, Szymon, Marona, Łucja, Goss, Jakub, Staszczak, Grzegorz, Kafar, Anna, Perlin, Piotr
Format: Article
Language:English
Subjects:
Aluminum gallium nitrides
Contact resistance
Continuous radiation
Efficiency
Emission
Emitters
Gallium nitrides
Gases
Indium gallium nitrides
Lasers
Light emitting diodes
Low temperature
Magnesium
Operating temperature
Polarization
Quantum wells
Semiconductor lasers
Semiconductors
Temperature
Thin films
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Summary:This work reports on the possibility of sustaining a stable operation of polarization-doped InGaN light emitters over a particularly broad temperature range. We obtained efficient emission from InGaN light-emitting diodes between 20 K and 295 K and from laser diodes between 77 K and 295 K under continuous wave operation. The main part of the p-type layers was fabricated from composition-graded AlGaN. To optimize injection efficiency and improve contact resistance, we introduced thin Mg-doped layers of GaN (subcontact) and AlGaN (electron blocking layer in the case of laser diodes). In the case of LEDs, the optical emission efficiency at low temperatures seems to be limited by electron overshooting through the quantum wells. For laser diodes, a limiting factor is the freeze-out of the magnesium-doped electron blocking layer for temperatures below 160 K. The GaN:Mg subcontact layer works satisfyingly even at the lowest operating temperature (20 K).
ISSN:1996-1944
1996-1944
DOI:10.3390/ma17184502