High-Performance Red Transparent Quantum Dot Light-Emitting Diodes via Fully Solution-Processed MXene/Ag NWs Top Electrode

• Published in: ACS applied materials & interfaces 2024-10, Vol.16 (40), p.54189-54198
• Main Authors: Su, Daojian, Ding, Ting, Gao, Peili, Liu, Hang, Song, Yinman, Yuan, Guoqiang, He, Xin, Meng, Fanyuan, Wang, Shuangpeng
• Format: Article
• Language: English
• Subjects: Functional Inorganic Materials and Devices
• ISSN: 1944-8244; 1944-8252; 1944-8252
• DOI: 10.1021/acsami.4c11431

The integration of high-performance transparent top electrodes with the functional layers of transparent quantum dot light-emitting diodes (T-QLEDs) poses a notable challenge. This study presents a composite transparent top electrode composed of MXene and Ag NWs. The composite electrode demonstrates exceptional transparency (84.6% at 620 nm) and low sheet resistance (16.07 Ω sq–1), rendering it suitable for integration into T-QLEDs. The inclusion of MXene nanosheets in the composite electrode serves a dual role: adjusting the work function to enhance electron injection efficiency and enhancing the interface between Ag NWs and the emissive layer, thereby mitigating the common issue of interfacial resistance in conventional transparent electrodes. This strategic amalgamation results in notable improvements in device performance, yielding a maximum current efficiency of 23.12 cd A–1, an external quantum efficiency of 13.98%, and a brightness of 21,015 cd m–2. These performance metrics surpass those achieved by T-LEDs employing pristine Ag NW electrodes. This study offers valuable insights into T-QLED device advancement and provides a promising approach for transparent electrode fabrication in optoelectronic applications.